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PolarHVTM HiPerFET Power MOSFET
Boost & Buck Configurations (Ultra-fast FRED Diode) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN64N50PD2 IXFN64N50PD3
3 4 3
VDSS ID25 trr
RDS(on)
= 500V = 50A 85m 200ns
miniBLOC, SOT-227 B E153432
2
1
4
2
2
D2
1
D3
1
4 3
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 500 500 30 40 50 200 64 2.5 10 625 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C Nm/lb.in. Nm/lb.in. g Advantages Easy To Mount Space Savings Tightly Coupled FRED Diode High Power Density V 5.5 V Applications PFC Circuits Uninterruptible Power Supplies (UPS) Switched-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives High Speed Power Switching Applications Robotics and Servo Controls
D2 Pin Out: 1 = Source 2 = Gate 3 = Drain / Diode anode 4 = Diode cathode
D3 Pin Out: 1 = Source / Diode Cathode 2 = Gate 3 = Drain 4 = Diode cathode
Features Fast Intrinsic Diode in Boost Configuration International Standard Package Encapsulating Epoxy Meets UL 94 V-0, Flammability Classification miniBLOC with Aluminium Nitride Isolation Avalanche Rated Low Package Inductance
Mounting Torque Terminal Connection Torque
1.5/13 1.3/11.5 30
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 500A VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 32A, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 500 3.0
200 nA 50 A 1 mA 85 m
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS99507F(4/09)
IXFN64N50PD2 IXFN64N50PD3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/s VR = 100V,VGS = 0V 0.6 6.0 Characteristic Values Min. Typ. Max. 64 250 1.5 A A V 0.05 VGS= 10V, VDS = 0.5 * VDSS, ID = 32A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 32A RG = 2 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 32A, Note 1 Characteristic Values Min. Typ. Max. 30 50 9700 970 30 30 25 85 22 150 50 50 S pF pF pF ns ns ns ns nC nC nC 0.20 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
200 ns C A
FRED Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IF25 VF IRM trr RthJC RthCS with Heat Transfer Paste 0.25 TC = 115C IF = 30A, Note 1 IF = 10A, diF/dt = -100A/s, VR = 100V, VGE = 0V TVJ = 150C TVJ = 100C 2.5 1.8 5.5 200 Characteristic Values Min. Typ. Max. 30 2.75 11.5 A V V A ns 0.9 C/W C/W
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN64N50PD2 IXFN64N50PD3
Fig. 1. Output Characteristics @ 25C
70 60 50 VGS = 10V 8V 7V 160 140 120 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
6V 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 5V
100 80 60
7V
6V 40 20 0 0 5 10 15 20 25 30 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
70 60 50 VGS = 10V 8V 7V 3.2 3.0 2.8 2.6
Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 32A I D = 64A
ID - Amperes
6V 40 30 20 10 0 0 2 4 6 8 10 12 14 16
5V
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current
3.4 3.2 3.0 2.8 VGS = 10V TJ = 125C
Fig. 6. Maximum Drain Current vs. Case Temperature
55 50 45 40
RDS(on) - Normalized
2.6
ID - Amperes
TJ = 25C
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 20 40 60 80 100 120 140 160
35 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFN64N50PD2 IXFN64N50PD3
Fig. 7. Input Admittance
90 80 70 90 80 70 TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
60 50 40 30 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
60 50
25C
TJ = 125C 25C - 40C
125C 40 30 20 10 0 0 20 40 60 80 100 120 140
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240 220 200 180 10 9 8 7 VDS = 250V I D = 32A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C
160 140 120 100 80 60 40 20 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
1.000
Fig. 12. Maximum Transient Thermal Impedance
f = 1 MHz Capacitance - PicoFarads
Ciss 10,000
1,000 Coss
100
Crss 10 0 5 10 15 20 25 30 35 40
0.010 0.001 0.01 0.1 1 10
Z(th)JC - C / W
0.100
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_64N50P(9J)4-27-09
Figs.13-19 FRED Diode Curves
70 A 60 I F 50 40 30 20 10 0 Qr 5 C 4
IXFN64N50PD2 IXFN64N50PD3
60 A 50 IRM 40 30 20
TVJ= 100C VR = 600V IF= 60A IF= 30A IF= 15A
TVJ= 100C VR = 600V IF= 60A IF= 30A IF=15A
3
TVJ=150C TVJ=100C TVJ= 25C
2
1
10 0
0
1
2
3 VF
V
4
0 100
A/s 1000 -diF/dt
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 13. Forward current IF versus VF
2.0
Fig. 14. Reverse recovery charge Qr versus -diF/dt
220 ns
Fig. 15. Peak reverse current IRM versus -diF/dt
120 V
TVJ= 100C VR = 600V
TVJ= 100C IF = 30A tfr VFR
1.2 s t fr 0.8
1.5 Kf 1.0
200 t rr 180
V FR
80
IRM
160
IF= 60A IF= 30A IF=15A
40 0.4
0.5
Qr
140
0.0
0
40
80
120 C 160 T VJ
120
0
200
400
600 -diF/dt
800 A/s 1000
0
0
200
400
0.0 600 A/s 1000 800 diF/dt
Fig. 16. Dynamic parameters Qr, IRM versus TVJ
2 1 K/W Z thJC 0.1
Fig. 17. Recovery time trr versus -diF/dt
Fig. 18. Peak forward voltage VFR and tfr versus diF/dt
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.0052 0.0003 0.0397
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
s t
1
Fig. 19 Transient thermal resistance junction to case
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_64N50P(9J)4-27-09

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